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| WSD500H Surface Monut Schottky Barrier Diode P b Lead(Pb)-Free Features: *Extremely Low V F *Very Small Conduction Losses. *Schottky Barrier Diodes Encapsulated in SOD-323 Package. SCHOTTKY BARRIER RECTIFIERS 100m AMPERES 40 VOLTS 1 2 SOD-323 SOD-323 Outline Demensions Unit:mm MILLMETERS Min Max Dim 1.60 1.80 A B 1.15 1.35 C 0.80 1.00 0.25 0.40 D E 0.15 REF H 0.00 0.10 J 0.089 0.377 K 2.30 2.70 PIN 1.CATHODE 2.ANODE WEITRON http://www.weitron.com.tw 1/3 05-Oct-05 WSD500H MAXIMUM RATING Characteristics Reverse Breakdown Voltage Average Rectified Forward Current Peak Forward Surge Current (8.3ms 1/2 Sine Wave) Storage Temperature Symbol VR IO IFSM Tstg WSD 500H 40 100 1.0 -40 to+125 Unit Volts mAmps Amps C ELECTRICAL CHARACTERISTICS (Ta=25 C) Characteristics Symbol MIN 40 MAX Unit Volts Reverse Breakdown Voltage I R =100uA V(BR)R VF Maximum Instantneous Forward Voltage IF=10mA Maximum Instantneous Reverse Current (VR=10V) Typical Junction Capacitance (VR=10V, f=1MHz) 0.45 1.0 20 Volts uAmps PF IR CJ Device Marking Item WSD500H Marking JV WEITRON http://www.weitron.com.tw 2/3 05-Oct-05 WSD500H Electrical Characteristics Curves (Ta=25 C unless specified otherwise) 1000 10m FORWARD CURRENT :IF (mA) REVERSE CURRENT: I R (A) 125 C 1m 100 10 1 0.1 75 C 100 C 10 25 C 1 25 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 FORWARD VOLTAGE:VF (V) REVERSE VOLTAGE:VR (V) FIG: 1 Forward Characteristics CAPACITANCE BETWEEN TERMINALS :CT (pF) FIG.2 Reverse Characteristics 100 100 Io CURRENT (%) 80 60 40 20 10 1 0 FIG.3 Capacitance Between Terminals Characteristics 30 35 REVERSE VOLTASGE : V R (V) 5 10 15 20 25 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta ( C) FIG.4 Derating Curve (mounting on glass epoxy PCBs) WEITRON http://www.weitron.com.tw 3/3 05-Oct-05 |
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